C. Jiao

Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

C. Jiao, A. C. Ahyi, Can Xu et al. · Journal of Applied Physics · 2016 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors

Wei-Chieh Kao, Michael Goryll, Matthew Marinella et al. · Semiconductor Science and Technology · 2015 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

A. C. Ahyi, Aaron Modic, C. Jiao et al. · Materials science forum · 2015 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Analysis of the electronic and chemical structure in boron and phosphorus passivated <i>4H</i>-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Joshua A. Taillon, Christopher J. Klingshirn, C. Jiao et al. · Applied Physics Letters · 2018 · 11 citations

Engineering, Materials Engineering, Materials Science +17

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

C. Jiao, A. C. Ahyi, Sarit Dhar et al. · Journal of Electronic Materials · 2017 · 10 citations

Engineering, Electrical Engineering, Materials Science +16