Interface-trap modeling for silicon-nanowire MOSFETs

Abstract

Interface traps generated during device operation or stress is directly related to transistor electrical characteristics and reliability as well as critical to device performance. In this paper, an interface-trap model is included in the unified compact model (Xsim) in order to physically and accurately characterize the interface-trap behavior in silicon-nanowire (SiNW) MOSFETs. The interface-trap model is verified by TCAD simulation data. Very good agreement is achieved and the effect of interface traps is accurately captured in the drain-source characteristics of SiNW MOSFETs. The physical interface-trap model is readily applicable for circuit and reliability modeling with SiNW transistors as building blocks.