Dhanoop Varghese

A comprehensive model for PMOS NBTI degradation: Recent progress

Muhammad A. Alam, Haldun Küflüoğlu, Dhanoop Varghese et al. · Microelectronics Reliability · 2006 · 294 citations

Engineering, Computer Engineering, Electrical Engineering +16

Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

Ahmad E. Islam, Haldun Küflüoğlu, Dhanoop Varghese et al. · IEEE Transactions on Electron Devices · 2007 · 265 citations

Engineering, Electrical Engineering, Physics +17

On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress

Souvik Mahapatra, Dipankar Saha, Dhanoop Varghese et al. · IEEE Transactions on Electron Devices · 2006 · 207 citations

Engineering, Electrical Engineering, Microelectronics +16

On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?

Souvik Mahapatra, Khaled Ahmed, Dhanoop Varghese et al. · 2007 · 148 citations

Engineering, Electrical Engineering, Microelectronics +16

On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

Dhanoop Varghese, Dipankar Saha, Souvik Mahapatra et al. · 2006 · 120 citations

Engineering, Electrical Engineering, Physics +17