D. Park

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Effects of Interface Trap Generation and Annihilation on the Data Retention Characteristics of Flash Memory Cells

J.-D. Lee, Jung Han Choi, D. Park et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 120 citations

Engineering, Computer Engineering, Electrical Engineering +17

Three-Dimensional MBCFET as an Ultimate Transistor

Soo‐Youn Lee, S.-M. Kim, Eunchul Yoon et al. · IEEE Electron Device Letters · 2004 · 36 citations

Engineering, Electrical Engineering, Biomems +14

A Partially Insulated Field-Effect Transistor (PiFET) as a Candidate for Scaled Transistors

Kyongmin Yeo, Changsuk Oh, S.M. Kim et al. · IEEE Electron Device Letters · 2004 · 30 citations

Engineering, Electrical Engineering, Microelectronics +15

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

Bai Hong, Nam Ung Cho, Su Jung Lee et al. · IEEE Electron Device Letters · 2011 · 23 citations

Engineering, Electrical Engineering, Materials Science +17