Three-Dimensional MBCFET as an Ultimate Transistor

Abstract

We successfully fabricated the three-dimensional multibridge channel MOSFET (MBCFET) with the channel length of 240 nm by using epitaxial growth technology and damascene gate process. Its subthreshold swing is 60 mV/dec, a nearly ideal value, resulting from the thin body completely surrounded by the gate. And its current drivability is 4.6 times larger than that of a planar dynamic random access memory (DRAM) MOSFET. This outstanding performance of MBCFET originates from the vertically increased width due to the multibridge channel, and the enhanced mobility due to the reduced vertical electric field in the thin body.