Shihuan Lin

A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

Guojun Zhu, Xing Zhou, Teck Seng Lee et al. · IEEE Transactions on Electron Devices · 2009 · 50 citations

Device Modeling, Electrical Engineering, Compact Model +11

Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium

Xing Zhou, Zhaomin Zhu, S.C. Rustagi et al. · IEEE Transactions on Electron Devices · 2008 · 41 citations

Device Modeling, Constant Hole Imref, Electrical Engineering +15

A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs

Guan Huei See, Xing Zhou, K. Chandrasekaran et al. · IEEE Transactions on Electron Devices · 2008 · 39 citations

Device Modeling, Electrical Engineering, Engineering +14

Subcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETs

Guojun Zhu, Xing Zhou, Yoke-King Chin et al. · IEEE Transactions on Electron Devices · 2010 · 30 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Physics +19

“Ground-Referenced” Model for Three-Terminal Symmetric Double-Gate MOSFETs With Source/Drain Symmetry

Guojun Zhu, Guan Huei See, Shihuan Lin et al. · IEEE Transactions on Electron Devices · 2008 · 22 citations

Device Modeling, Electrical Engineering, Ldquoground-referencedrdquo Model +6