Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Abstract

Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.

References

Page 1

	Year	Citations
Band-structure engineering for low-threshold high-efficiency semiconductor lasers A.R. Adams Electronics Letters PhotonicsElectrical EngineeringBand-structure EngineeringEngineeringPhysics	1986	572
Band structure engineering of semiconductor lasers for optical communications Eli Yablonovitch, E. O. Kane Journal of Lightwave Technology Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	1988	324
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy Zhen Fang, K. Y., D. H. Jaw, Journal of Applied Physics EngineeringOptoelectronic DevicesChemistryLuminescence PropertySemiconductors	1990	319
High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density H. K. Choi, Stephen Eglash Applied Physics Letters Wide-bandgap SemiconductorEngineeringLaser ScienceLaser ApplicationsLaser Material	1992	126
Electroreflectance measurements in mixed III–V alloys Sarma S. Vishnubhatla, Bernard Eyglunent, John C. Woolley Canadian Journal of Physics Materials EngineeringMaterials ScienceElectroreflectance MeasurementsElectromigration TechniqueEngineering	1969	86
Long-wavelength photoluminescence of InAs1−<i>x</i>Sb<i>x</i> (0&lt;<i>x</i>&lt;1) grown by molecular beam epitaxy on (100) InAs M. Y. Yen, R. People, K. W. Wecht, Applied Physics Letters Optical MaterialsEngineeringInas1−xsbx FilmsLuminescence Peak WavelengthsOptoelectronic Devices	1988	75
X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates M. Fatemi, Robert E. Stahlbush Applied Physics Letters Linear Elasticity TheoryEngineeringSi-ge Buffer LayersVacuum DeviceSilicon On Insulator	1991	71
Proposal for III-V ordered alloys with infrared band gaps Su‐Huai Wei, Alex Zunger Applied Physics Letters Materials ScienceMaterials EngineeringTransition Metal ChalcogenidesEngineeringPhysics	1991	60
3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy R. Menna, D. Capewell, Ramon U. Martinelli, Applied Physics Letters Laser ActionPhotonicsEngineeringLaser ScienceSemiconductor Lasers	1991	56
High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector S. R. Kurtz, L. R. Dawson, T. E. Zipperian, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesIntegrated CircuitsInsb Substrate	1990	54

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