Applied Physics Letters · 1994 · 73 citations · 17 references
Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic DevicesSurface-emitting LasersHigh-power LasersSemiconductorsSemiconductor LasersOptical PropertiesAs-rich InassbInassb Active RegionsLight-emitting DiodesCompound SemiconductorMaterials SciencePhotonicsPhysicsOptoelectronic MaterialsStrained-layer SublatticesLaser MaterialsApplied PhysicsOptoelectronicsSls/inpsb Heterostructure
Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.
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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
Zhen Fang, K. Y., D. H. Jaw et al. · Journal of Applied Physics · 1990 · 319 citations