K. W. Wecht - Concepedia

Author

K. W. Wecht

AT&T (United States)

Also Known As

K W Wecht, K. W. Wecht, K. Wecht, K.W. Wecht, Kenneth W. Wecht, R.A. Logan

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)Chalmers University of Technology

About

K. W. Wecht is an author at AT&T (United States) specializing in engineering, photonics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	44	3.5K
2	Applied Physics	20	26	2.4K
3	Natural Sciences	4	4	694
4	Chemistry	2	2	491
5	Chemical Engineering	1	1	43

K. W. Wecht

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Concentration dependence of the absorption coefficient for <i>n</i>− and <i>p</i>−type GaAs between 1.3 and 1.6 eV H. C. Casey, D. D. Sell, K. W. Wecht Journal of Applied Physics EngineeringOptoelectronic DevicesAbsorption Coefficient αSemiconductorsElectronic Devices	1975	613
TWO-PHOTON EXCITATION OF FLUORESCENCE BY PICOSECOND LIGHT PULSES J. A. Giordmaine, P. M. Rentzepis, S. L. Shapiro, Applied Physics Letters EngineeringChemistryPhosphorescence ImagingOptical PulsesOptical Spectroscopy	1967	448
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures R. People, J. C. Bean, D. V. Lang, Applied Physics Letters Oxide HeterostructuresSemiconductorsMaterials ScienceHole GasEngineering	1984	302
Concentration dependence of the refractive index for <i>n</i> - and <i>p</i> -type GaAs between 1.2 and 1.8 eV D. D. Sell, H. C. Casey, K. W. Wecht Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesOptical Characterization	1974	255
Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, <i>N</i>-<i>n</i> heterojunction by <i>C</i>-<i>V</i> profiling R. People, K. W. Wecht, K. Alavi, Applied Physics Letters SemiconductorsSemiconductor TechnologyEngineeringCrystalline DefectsPhysics	1983	240
Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing Navin Chand, R. People, F. A. Baiocchi, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1986	178
Identification of the Dangling-Bond State within the Mobility Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si: H by Depletion-Width-Modulated ESR Spectroscopy J. David Cohen, J. P. Harbison, K. W. Wecht Physical Review Letters Wide-bandgap SemiconductorEngineeringDefect ToleranceElectronic StructureSpectra-structure Correlation	1982	127
Coherent Optical Mixing in Optically Active Liquids P. M. Rentzepis, J. A. Giordmaine, K. W. Wecht Physical Review Letters PhotonicsCoherent Optical MixingEngineeringPhysicsOptical Properties	1966	120
Mode-locked hybrid soliton pulse source with extremely wide operating frequency range Paul A. Morton, V. Mizrahi, Peter A. Andrekson, IEEE Photonics Technology Letters Fiber External CavityEngineeringLaser ScienceOptical Transmission SystemLaser Physics	1993	110
Stimulated Raman and Brillouin Scattering with Picosecond Light Pulses S. L. Shapiro, J. A. Giordmaine, K. W. Wecht Physical Review Letters Optical PumpingPhotonicsEngineeringLaser SciencePhysics	1967	76

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