K. W. Wecht

Concentration dependence of the absorption coefficient for <i>n</i>− and <i>p</i>−type GaAs between 1.3 and 1.6 eV

H. C. Casey, D. D. Sell, K. W. Wecht · Journal of Applied Physics · 1975 · 618 citations

Engineering, Materials Engineering, Materials Science +17

TWO-PHOTON EXCITATION OF FLUORESCENCE BY PICOSECOND LIGHT PULSES

J. A. Giordmaine, P. M. Rentzepis, S. L. Shapiro et al. · Applied Physics Letters · 1967 · 448 citations

Natural Sciences, Chemistry, Spectroscopy +1

Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures

R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations

Engineering, Materials Engineering, Materials Science +17

Concentration dependence of the refractive index for <i>n</i> - and <i>p</i> -type GaAs between 1.2 and 1.8 eV

D. D. Sell, H. C. Casey, K. W. Wecht · Journal of Applied Physics · 1974 · 255 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, <i>N</i>-<i>n</i> heterojunction by <i>C</i>-<i>V</i> profiling

R. People, K. W. Wecht, K. Alavi et al. · Applied Physics Letters · 1983 · 240 citations

Engineering, Materials Science, Physics +17