Concepedia
Statistics
Publications
34
Citations
1.4K
H-Index
21
Active since
1979
Affiliations
Alcatel Lucent (Germany)(Current)
Siemens (United States)
AT&T (United States)
Princeton University
Massachusetts Institute of Technology
K. Alavi is an author at Alcatel Lucent (Germany) specializing in materials science, electronic materials, and engineering.
Publications per year
1979–1996
Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, <i>N</i>-<i>n</i> heterojunction by <i>C</i>-<i>V</i> profiling
R. People, K. W. Wecht, K. Alavi et al. · Applied Physics Letters · 1983 · 240 citations
Engineering, Materials Science, Physics +17
1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
H. Temkin, K. Alavi, W. R. Wagner et al. · Applied Physics Letters · 1983 · 125 citations
Engineering, Electrical Engineering, Materials Science +17
Interband magnetoabsorption of In_{0.53}Ga_{0.47}As
K. Alavi, R. L. Aggarwal, Steven Groves · Physical review. B, Condensed matter · 1980 · 116 citations
Natural Sciences, Materials Science, Physics +6
Experimental determination of the edge depletion width of ahe two-dimensional electron gas in GaAs/Al<i>x</i>Ga1−<i>x</i>As
Keunsu Choi, D. C. Tsui, K. Alavi · Applied Physics Letters · 1987 · 83 citations
Natural Sciences, Materials Science, Physics +17
High-gain Al<sub>0.48</sub>In<sub>0.52</sub>As/Ga<sub>0.53</sub>As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxy
R. J. Malik, J. R. Hayes, Federico Capasso et al. · IEEE Electron Device Letters · 1983 · 62 citations
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