W. R. Wagner

1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

H. Temkin, K. Alavi, W. R. Wagner et al. · Applied Physics Letters · 1983 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

Correspondence: Grain boundaries in thin-film bicrystals of surface-reactive metals prepared by vacuum welding

W. R. Wagner, R. W. Balluffi · Philosophical magazine · 1974 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In-Ga oven

K. Y. Cheng, A. Y. Cho, W. R. Wagner et al. · Journal of Applied Physics · 1981 · 67 citations

Natural Sciences, Materials Engineering, Materials Science +14

Photoluminescence study of acceptors in Al<i>x</i>Ga1−<i>x</i>As

V. Swaminathan, J. L. Zilko, W. T. Tsang et al. · Journal of Applied Physics · 1982 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +16

Temperature dependence of photoluminescence of <i>n</i>-InGaAsP

H. Temkin, V. G. Keramidas, M. A. Pollack et al. · Journal of Applied Physics · 1981 · 54 citations

Engineering, Materials Engineering, Materials Science +17