V. Swaminathan

Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

W. C. Dautremont–Smith, J. C. Nabity, V. Swaminathan et al. · Applied Physics Letters · 1986 · 108 citations

Semiconductors, Defect Level Passivation, Semiconductor Technology +13

Hydrogen passivation of acceptors in <i>p</i>-InP

W. C. Dautremont–Smith, J. Lopata, S. J. Pearton et al. · Journal of Applied Physics · 1989 · 83 citations

Engineering, Molecular Biology, Chemistry +17

Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or Zn

V. Swaminathan, S. M. Copley · Journal of the American Ceramic Society · 1975 · 82 citations

Materials Science, Semiconductors, Gaas Crystals +11

Photoluminescence study of acceptors in Al<i>x</i>Ga1−<i>x</i>As

V. Swaminathan, J. L. Zilko, W. T. Tsang et al. · Journal of Applied Physics · 1982 · 65 citations

Materials Science, Aluminium Nitride, Ii-vi Semiconductor +14

Morphology of GaAs and Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

R. A. Stall, J. L. Zilko, V. Swaminathan et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 59 citations

Materials Science, Semiconductors, Optical Materials +13