J. C. Nabity

Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

W. C. Dautremont–Smith, J. C. Nabity, V. Swaminathan et al. · Applied Physics Letters · 1986 · 108 citations

Semiconductors, Defect Level Passivation, Semiconductor Technology +13

Passivation of Si donors and <i>D</i> <i>X</i> centers in AlGaAs by hydrogen plasma exposure

J. C. Nabity, Michael Stavola, J. Lopata et al. · Applied Physics Letters · 1987 · 93 citations · Full text

Wide-bandgap Semiconductor, Engineering, Chemistry +18

Site Symmetry and Ground-State Characteristics for the Oxygen Donor in Silicon

Michael Stavola, Keon M. Lee, J. C. Nabity et al. · Physical Review Letters · 1985 · 63 citations

Engineering, Absorption Spectroscopy, Chemistry +18

Evidence for two-dimensional phonons in a thin metal film

J. C. Nabity, M. N. Wybourne · Physical review. B, Condensed matter · 1991 · 30 citations

Acoustic Coupling, Electrical Engineering, Engineering +15

Metastability and polarization effects in a <i>p</i> <i>n</i> heterojunction device due to deep states

Michael Stavola, Federico Capasso, J. C. Nabity et al. · Applied Physics Letters · 1986 · 11 citations

Aluminium Nitride, Engineering, Unusual Metastable +17