R. A. Stall

Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

W. Shan, W. Walukiewicz, E. E. Häller et al. · Journal of Applied Physics · 1998 · 141 citations

Optical Materials, Engineering, Crystal Growth Technology +17

Optical transitions in In<i>x</i>Ga1−<i>x</i>N alloys grown by metalorganic chemical vapor deposition

W. Shan, B. D. Little, J. J. Song et al. · Applied Physics Letters · 1996 · 88 citations

Materials Science, Decay Time, Wide-bandgap Semiconductor +15

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

R. A. Stall, C. E. C. Wood, P. D. Kirchner et al. · Electronics Letters · 1980 · 71 citations

Electrical Engineering, Deep Levels, Growth Temperature +8

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Chawon Hwang, M. Schurman, W. E. Mayo et al. · Journal of Electronic Materials · 1997 · 69 citations

Materials Science, Hall Mobilities, Electrical Engineering +8

A study of Ge/GaAs interfaces grown by molecular beam epitaxy

R. A. Stall, C. E. C. Wood, K. Board et al. · Journal of Applied Physics · 1981 · 66 citations

Ge Layers, Electrical Engineering, Epitaxial Growth +13