Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN - Concepedia

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Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

69

Citations

10

References

1997

Year

Chawon Hwang, M. Schurman, W. E. Mayo, Y.C. Lu, R. A. Stall, T. Salagaj

Journal of Electronic Materials

Materials ScienceHall MobilitiesElectrical EngineeringSemiconductor TechnologyEngineeringWide-bandgap SemiconductorApplied PhysicsStructural DefectsGan Power DeviceChemical ImpuritiesCategoryiii-v Semiconductor

References

	Year	Citations

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