Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Electron mobilities in gallium, indium, and aluminum nitrides

V.W.L. Chin, T.L. Tansley, Tanakorn Osotchan · Journal of Applied Physics · 1994 · 507 citations

Natural Sciences, Materials Science, Physics +17

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Engineering, Materials Engineering, Materials Science +12

Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN

M. S. Shur, Boris Gelmont, M. Asif Khan · Journal of Electronic Materials · 1996 · 224 citations

Engineering, Materials Science, Physics +16