Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or Zn

Abstract

Stress‐strain curves are presented for Si‐doped GaAs single crystals deformed in compression parallel to <100> and <111> at temperatures ranging from 250° to 550°C. In both orientations, slip occurs only on {111} <1&1bar;0>. Repeated‐yielding experiments on GaAs crystals, both undoped and doped with Si, Cr, or Zn, indicate that Si‐doped crystals ( n ‐type) have a greater yield stress than undoped crystals, that undoped crystals have a greater yield stress than Zn‐doped crystals p ‐type), and that Cr doping does not significantly affect the yield stress. Extensive crack formation resulting from deformation was not observed. Compression specimens normally failed by breaking into several columnar fragments with their long dimension parallel to the stress axis.