Applied Physics Letters · 1987 · 83 citations · 8 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Material CharacterizationSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsEdge WidthElectron LocalizationExperimental CharacterizationHeterojunctionsMetallurgical CharacterizationSemiconductor HeterojunctionsTwo-dimensional Electron GasesTwo-dimensional Semiconductor Heterostructures
A new method based on one-dimensional localization theory is introduced to determine the width of the two-dimensional electron gas (2DEG) in narrow conducting channels of GaAs/AlxGa1−xAs heterojunctions. The edge depletion width of the 2DEG, measured by the difference between this width and the metallurgical width of the channel, is ∼0.5 μm±0.2 μm for a 2DEG density ns=1.5×1011/cm2.
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One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
T. J. Thornton, M. Pepper, H. Ahmed et al. · Physical Review Letters · 1986 · 636 citations