Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion Layers

Abstract

The localization and electron-electron interaction parts of the small conductivity variation with temperature have been extracted from data obtained on narrow field-effect transistors. One-dimensional behavior is observed and is compared with measurements on the two-dimensional region of the test samples. Magnetoconductance which selectively removes the localization part of the resistance has allowed a theoretical interpretation of the total temperature dependence.