One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction

Abstract

We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as ${T}^{2}$.