D. A. Andrews - Concepedia

Concepedia

Author

D. A. Andrews

BT Group (United Kingdom)

Also Known As

D A Andrews, D Andrews, D. A. Andrews, D. Andrews, D.A. Andrews, DA Andrews

39

Publications

2.1K

Citations

17

H-Index

50

Concepts

All Affiliations

BT Group (United Kingdom)Cavendish Hospital University of Oxford

DA

About

D. A. Andrews is an author at BT Group (United Kingdom) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	1.3K
2	Applied Physics	16	22	1.3K
3	Business	1	1	719
4	Natural Sciences	1	1	73
5	Chemical Engineering	1	1	17

D. A. Andrews

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26

Publications

2.1K

Citations

17

H-Index

	Year	Citations
The level of service inventory – revised D. A. Andrews, James Bonta, D. J. Andrews Services ManagementService StudyBusinessService ScienceService Inventory –	1995	719
One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction T. J. Thornton, M. Pepper, H. Ahmed, Physical Review Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsElectrical EngineeringEngineeringPhysics	1986	627
Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100) A.J. Murrell, Andrew T. S. Wee, D. Howard Fairbrother, Journal of Applied Physics EngineeringSurface Chemical ProcessesChemistryChemical DepositionGa Deposition	1990	89
Direct energy gap of Al1−<i>x</i>In<i>x</i>As lattice matched to InP B. J. Wakefield, M. A. G. Halliwell, T. M. Kerr, Applied Physics Letters Quantum Lattice SystemEngineeringComposition LatticeQuantum MaterialsCatholuminescence Spectroscopy	1984	73
Universal conductance fluctuations and electron coherence lengths in a narrow two-dimensional electron gas T. J. Thornton, M. Pepper, H. Ahmed, Physical review. B, Condensed matter SemiconductorsQuantum ScienceElectrical EngineeringCorrelation LengthElectron Coherence Lengths	1987	55
The growth and characterization of nominally undoped Al1−<i>x</i>In<i>x</i>As grown by molecular beam epitaxy Graham J. Davies, T. M. Kerr, C. G. Tuppen, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceEngineeringPhysicsCrystal Growth TechnologyApplied Physics	1984	52
Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy D. A. Andrews, M.A.Z. Rejman-Greene, Bonnie J. Wakefield, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsLaser MaterialDielectric Coating	1988	47
Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy Graham J. Davies, D. A. Andrews, R. Heckingbottom Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	1981	34
Surface studies of the thermal decomposition of triethylgallium on GaAs (100) A.J. Murrell, Andrew T. S. Wee, D. Howard Fairbrother, Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsThermal Decomposition	1990	33
Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy D. A. Andrews, S.T. Davey, C. G. Tuppen, Applied Physics Letters Optical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic DevicesChemistry	1988	32

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