M. A. G. Halliwell

The interpretation of X-ray rocking curves from III–V semiconductor device structures

M. A. G. Halliwell, M. H. Lyons, M. J. Hill · Journal of Crystal Growth · 1984 · 232 citations

Natural Sciences, Electrical Engineering, Materials Science +9

Equilibrium critical thickness for Si1−<i>x</i>Ge<i>x</i> strained layers on (100) Si

D. C. Houghton, C. J. Gibbings, C. G. Tuppen et al. · Applied Physics Letters · 1990 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +17

Direct energy gap of Al1−<i>x</i>In<i>x</i>As lattice matched to InP

B. J. Wakefield, M. A. G. Halliwell, T. M. Kerr et al. · Applied Physics Letters · 1984 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +16

Precise lattice parameter determination of dislocation-free gallium arsenide—I

J. F. C. Baker, Michael Hart, M. A. G. Halliwell et al. · Solid-State Electronics · 1976 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +14

Estimation of percentage relaxation in Si/Si_1-xGe_xstrained-layer superlattices

M. A. G. Halliwell, M. H. Lyons, S.T. Davey et al. · Semiconductor Science and Technology · 1989 · 52 citations

Natural Sciences, Materials Science, Physics +16