Semiconductor Science and Technology · 1989 · 52 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials CharacterizationSemiconductor MaterialsSemiconductor PhysicsSilicon MaterialsStrain AnalysisStrain EngineeringX-ray DiffractionAlloy Composition EffectsStrain EffectsStrain RelaxationStrained Layer StructuresStrained-layer HeterostructuresStructural RelaxationSuperlattice MaterialsSuperlattices
A series of Si/Si1-xGex strained-layer superlattice structures has been studied by X-ray double-crystal diffractometry, Raman spectroscopy and transmission electron microscopy. The periodicity of the superlattices, the alloy composition and the degree of relaxation have been measured. The precisions of the three techniques are discussed and the results critically compared.
7
X-ray rocking curve analysis of superlattices
V. S. Speriosu, T. Vreeland · Journal of Applied Physics · 1984 · 269 citations
Raman scattering from Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattices
F. Cerdeira, A. Pinczuk, J. C. Bean et al. · Applied Physics Letters · 1984 · 263 citations
Raman scattering in GeSi alloys
W. J. Brya · Solid State Communications · 1973 · 204 citations