Publication | Closed Access
Estimation of percentage relaxation in Si/Si<sub>1-x</sub>Ge<sub>x</sub>strained-layer superlattices
52
Citations
7
References
1989
Year
Materials ScienceMaterials EngineeringIi-vi SemiconductorSemiconductor TechnologyEngineeringPhysicsX-ray DiffractionApplied PhysicsSuperconductivityCondensed Matter PhysicsSemiconductor MaterialAlloy CompositionLayered MaterialCrystallographyX-ray Double-crystal DiffractometryMicrostructurePercentage Relaxation
A series of Si/Si1-xGex strained-layer superlattice structures has been studied by X-ray double-crystal diffractometry, Raman spectroscopy and transmission electron microscopy. The periodicity of the superlattices, the alloy composition and the degree of relaxation have been measured. The precisions of the three techniques are discussed and the results critically compared.
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