Concepedia

M. Hockly

MH

Statistics

Publications

10

Citations

375

H-Index

10

Active since

1978

Affiliations

BT Group (United Kingdom)(Current)

University of Oxford

M. Hockly is an author at BT Group (United Kingdom) specializing in materials science, natural sciences, and electronic materials.

Publications per year

1978–1993

10

Publications

10

The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values

C. G. Tuppen, C. J. Gibbings, M. Hockly · Journal of Crystal Growth · 1989 · 102 citations

Natural Sciences, Materials Engineering, Materials Science +14

Nature, origin and effect of dislocations in epitaxial semiconductor layers

G. R. Booker, J.M. Titchmarsh, Julian Fletcher et al. · Journal of Crystal Growth · 1978 · 67 citations

Natural Sciences, Materials Engineering, Materials Science +12

Estimation of percentage relaxation in Si/Si<sub>1-x</sub>Ge<sub>x</sub>strained-layer superlattices

M. A. G. Halliwell, M. H. Lyons, S.T. Davey et al. · Semiconductor Science and Technology · 1989 · 52 citations

Natural Sciences, Materials Science, Physics +16

Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon

C. J. Gibbings, C. G. Tuppen, M. Hockly · Applied Physics Letters · 1989 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Misfit dislocation multiplication processes in Si1−<i>x</i>Ge<i>x</i> alloys for <i>x</i>&lt;0.15

C. G. Tuppen, C. J. Gibbings, M. Hockly et al. · Applied Physics Letters · 1990 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

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