B. J. Wakefield

Direct energy gap of Al1−<i>x</i>In<i>x</i>As lattice matched to InP

B. J. Wakefield, M. A. G. Halliwell, T. M. Kerr et al. · Applied Physics Letters · 1984 · 73 citations

Quantum Lattice System, Engineering, Composition Lattice +17

The fabrication, assessment and optical properties of high-concentration Nd3+- and Er3+-doped silica-based fibres

B.J. Ainslie, S.P. Craig, S.T. Davey et al. · Materials Letters · 1988 · 59 citations

Materials Science, High-concentration Nd3+-, Optical Materials +10

The growth and characterization of nominally undoped Al1−<i>x</i>In<i>x</i>As grown by molecular beam epitaxy

Graham J. Davies, T. M. Kerr, C. G. Tuppen et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 52 citations

Materials Science, Engineering, Physics +11

A photoluminescence study of Ga_1-xIn_xAs/Al_1-yIn_yAs quantum wells grown by MBE

S.T. Davey, E.G. Scott, B. J. Wakefield et al. · Semiconductor Science and Technology · 1988 · 37 citations

Wide-bandgap Semiconductor, Photoluminescence, Engineering +12

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

D. A. Andrews, S.T. Davey, C. G. Tuppen et al. · Applied Physics Letters · 1988 · 32 citations

Optical Materials, Engineering, Crystal Growth Technology +16