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A photoluminescence study of Ga<sub>1-x</sub>In<sub>x</sub>As/Al<sub>1-y</sub>In<sub>y</sub>As quantum wells grown by MBE
37
Citations
22
References
1988
Year
Wide-bandgap SemiconductorPhotoluminescenceEngineeringPhysicsOptoelectronic MaterialsApplied PhysicsQuantum MaterialsQuantum WellsPotential FluctuationsPhotoluminescence StudyLuminescence PropertyPhotoluminescence StudiesOptoelectronicsCategoryiii-v SemiconductorCompound Semiconductor
Photoluminescence studies of Ga1-xInxAs/Al1-yInyAs quantum wells nominally lattice matched to InP are reported. The photoluminescence from two samples each having six quantum wells of thicknesses ranging from about 6 to 122 AA is studied in detail. The main emission peak associated with each quantum well is attributed to excitonic recombination. The emission from the 6 AA quantum well at 897.3 nm is found to have a peak width of only 18 meV at 4.2 K. Temperature dependence studies show that at 4.2 K the excitons are localised at potential fluctuations in the quantum wells. Impurity-related emission is also observed from some of the quantum wells.
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