E.G. Scott

A photoluminescence study of Ga_1-xIn_xAs/Al_1-yIn_yAs quantum wells grown by MBE

S.T. Davey, E.G. Scott, B. J. Wakefield et al. · Semiconductor Science and Technology · 1988 · 37 citations

Engineering, Materials Engineering, Materials Science +17

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

E.G. Scott, D. Wake, G. D. T. Spiller et al. · Journal of Applied Physics · 1989 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systems

E.G. Scott, D. A. Andrews, Graham J. Davies · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 29 citations

Engineering, Materials Engineering, Semiconductor Materials +1

Monolithically integrated InGaAs/InP PIN-JFET photoreceiver

D. Wake, E.G. Scott, I.D. Henning · Electronics Letters · 1986 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Magnetic depopulation of sub-bands in In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions

D.J. Newson, M. Pepper, H. W. Myron et al. · Journal of Physics C Solid State Physics · 1986 · 17 citations

Natural Sciences, Materials Science, Physics +16