Concepedia

E.G. Scott

ES

Statistics

Publications

14

Citations

253

H-Index

11

Active since

1985

Affiliations

BT Group (United Kingdom)(Current)

University of Oxford

E.G. Scott is an author at BT Group (United Kingdom) specializing in engineering, applied physics, and optoelectronics.

Top concepts

EngineeringApplied PhysicsOptoelectronicsElectrical EngineeringPhysicsPhotonicsMaterial ScienceMicroelectronicsOptoelectronic DevicesSemiconductors

Publications per year

1985–1991

14

Publications

14

A photoluminescence study of Ga<sub>1-x</sub>In<sub>x</sub>As/Al<sub>1-y</sub>In<sub>y</sub>As quantum wells grown by MBE

S.T. Davey, E.G. Scott, B. J. Wakefield et al. · Semiconductor Science and Technology · 1988 · 37 citations

Wide-bandgap Semiconductor, Photoluminescence, Engineering +12

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

E.G. Scott, D. Wake, G. D. T. Spiller et al. · Journal of Applied Physics · 1989 · 32 citations

Semiconductors, Beryllium Diffusion, Electrical Engineering +11

Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systems

E.G. Scott, D. A. Andrews, Graham J. Davies · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 29 citations

Materials Science, Materials Engineering, Ga–al–in–as Ternary +8

Monolithically integrated InGaAs/InP PIN-JFET photoreceiver

D. Wake, E.G. Scott, I.D. Henning · Electronics Letters · 1986 · 19 citations

Semiconductor Technology, Photonics, Electrical Engineering +14

Magnetic depopulation of sub-bands in In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterojunctions

D.J. Newson, Karl‐Fredrik Berggren, M. Pepper et al. · Journal of Physics C Solid State Physics · 1986 · 17 citations

Wide-bandgap Semiconductor, Magnetic Properties, Engineering +20

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