Interband magnetoabsorption of In_{0.53}Ga_{0.47}As

Abstract

Interband magneto-optical absorption in the Faraday and the Voigt configurations has been studied near liquid-He temperature in ${\mathrm{In}}_{0.53}$${\mathrm{Ga}}_{0.47}$As grown by liquid-phase epitaxy on InP. Using a quasi-Ge model analysis with exciton corrections, the interband data has yielded ${E}_{g}=0.813\ifmmode\pm\else\textpm\fi{}0.001$ eV, ${m}_{0}(\frac{1}{{m}_{c}}+\frac{1}{{m}_{\mathrm{hh}}})=26.5\ifmmode\pm\else\textpm\fi{}0.5$, ${m}_{0}(\frac{1}{{m}_{c}}+\frac{1}{{m}_{\mathrm{lh}}})=44.0\ifmmode\pm\else\textpm\fi{}1.0$, and ${\ensuremath{\gamma}}_{3}\ensuremath{-}{\ensuremath{\gamma}}_{2}=0.7\ifmmode\pm\else\textpm\fi{}0.2$. Using ${E}_{p}=25.3$ eV and $\ensuremath{\Delta}=0.36$ eV (from linear interpolation between InAs and GaAs) and $\frac{{m}_{c}}{{m}_{0}}=0.041$ (from earlier intraband measurements), the present interband data has yielded a set of parameters for the quasi-Ge model; in particular, ${m}_{\mathrm{hh}}\ensuremath{\simeq}0.47{m}_{0}$ and ${m}_{\mathrm{lh}}\ensuremath{\simeq}0.050{m}_{0}$. A precise determination of ${E}_{p}$ requires a direct measurement of $\ensuremath{\Delta}$ and ${g}_{c}$.