M. Y. Yen

Molecular beam epitaxial growth and optical properties of InAs1−<i>x</i>Sb<i>x</i> in 8–12 μm wavelength range

M. Y. Yen, B. F. Levine, C. G. Bethea et al. · Applied Physics Letters · 1987 · 80 citations

Natural Sciences, Materials Engineering, Materials Science +17

Photoreflectance from GaAs and GaAs/GaAs interfaces

Michael Sydor, J. E. Angelo, Jerome J. Wilson et al. · Physical review. B, Condensed matter · 1989 · 76 citations

Engineering, Electrical Engineering, Materials Science +15

Long-wavelength photoluminescence of InAs1−<i>x</i>Sb<i>x</i> (0&amp;lt;<i>x</i>&amp;lt;1) grown by molecular beam epitaxy on (100) InAs

M. Y. Yen, R. People, K. W. Wecht et al. · Applied Physics Letters · 1988 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−<i>x</i>Sb<i>x</i> grown on (100) GaAs by molecular-beam epitaxy

M. Y. Yen, R. People, K. W. Wecht · Journal of Applied Physics · 1988 · 65 citations

Engineering, Materials Engineering, Materials Science +13

Photoreflectance of Al<i>x</i>Ga1−<i>x</i>As and Al<i>x</i>Ga1−<i>x</i>As/GaAs interfaces and high-electron-mobility transistors

Michael Sydor, Neal Jahren, W. C. Mitchel et al. · Journal of Applied Physics · 1990 · 62 citations

Engineering, Materials Engineering, Materials Science +16