Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbx grown on (100) GaAs by molecular-beam epitaxy

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsCompound SemiconductorsIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsElectroluminescenceMolecular Beam EpitaxyPhotoluminescencePhotoluminescence Spectroscopy

Abstract

InAs1−xSbx films have been successfully grown by molecular-beam epitaxy on (100) GaAs substrates. Long wavelength photoluminescence spectra have been obtained reproducibly in the 3–5 and 8–12 μm spectral ranges in III-V compound semiconductors.

References

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Natural Sciences, Materials Science, Physics +16

Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range

M. Y. Yen, B. F. Levine, C. G. Bethea et al. · Applied Physics Letters · 1987 · 80 citations

Natural Sciences, Materials Engineering, Materials Science +17

Long-wavelength photoluminescence of InAs1−xSbx (0&lt;x&lt;1) grown by molecular beam epitaxy on (100) InAs

M. Y. Yen, R. People, K. W. Wecht et al. · Applied Physics Letters · 1988 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Luminescence from HgCdTe alloys

A. T. Hunter, T. C. McGill · Journal of Applied Physics · 1981 · 59 citations

Natural Sciences, Materials Science, Physics +11

Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

C. G. Bethea, M. Y. Yen, B. F. Levine et al. · Applied Physics Letters · 1987 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−<i>x</i>Sb<i>x</i> grown on (100) GaAs by molecular-beam epitaxy

Concepts

Abstract

References