Long wavelength InAs1−<i>x</i>Sb<i>x</i>/GaAs detectors prepared by molecular beam epitaxy

Abstract

We prepared InAs0.02Sb0.98 on semi-insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).