Publication | Closed Access
Molecular beam epitaxial growth and optical properties of InAs1−<i>x</i>Sb<i>x</i> in 8–12 μm wavelength range
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Citations
9
References
1987
Year
Materials SciencePhotonicsSemiconductorsOptical MaterialsEngineeringPhysicsOptical PropertiesμM Wavelength RangeCrystal Growth TechnologyApplied PhysicsOptical AbsorptionInas SubstratesMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorSemiconductor Nanostructures
We have successfully grown InAs1−xSbx by molecular beam epitaxy over the complete compositional range of 0&lt;x&lt;1 on InAs substrates. The band gaps have been measured using optical absorption and cut-off wavelengths as long as 12.5 μm have been obtained.
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