Long-wavelength photoluminescence of InAs1−xSbx (0&lt;x&lt;1) grown by molecular beam epitaxy on (100) InAs

Abstract

InAs1−xSbx films have been successfully prepared by molecular beam epitaxy on (100) InAs substrates. Long-wavelength photoluminescence has been investigated over the complete compositional range. Luminescence peak wavelengths as long as 8 μm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch. These results are indicative of high-quality material.

References

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