Applied Physics Letters · 1988 · 75 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsCompound SemiconductorsIii-v SemiconductorsLuminescent MaterialsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsCarrier Material QualityElectroluminescenceLattice MismatchLattice Mismatch EffectsMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopySemiconductor Light-emitting Materials
InAs1−xSbx films have been successfully prepared by molecular beam epitaxy on (100) InAs substrates. Long-wavelength photoluminescence has been investigated over the complete compositional range. Luminescence peak wavelengths as long as 8 μm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch. These results are indicative of high-quality material.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations