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OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS
84
Citations
4
References
1964
Year
Optical MaterialsEngineeringOptoelectronic DevicesHomogeneous SamplesSemiconductorsIi-vi SemiconductorOptical PropertiesQuantum MaterialsRoom-temperature ValuesThermodynamicsMaterials ScienceMaterials EngineeringPhysicsOptoelectronic MaterialsSemiconductor MaterialSolid-state PhysicHigh Temperature MaterialsApplied PhysicsSlow Directional FreezingAlloy PhaseOptoelectronics
Homogeneous samples of InAs–InSb alloys have been produced by very slow directional freezing and zone recrystallization methods, and used for the determination of values of the optical energy gap E g by standard infrared transmission measurements. Room-temperature values of E g have been obtained in the composition ranges 0–20 and 55–100 mol % InSb and the variation of E g with temperature from 90 °K to 360 °K for alloys in the composition ranges 0–20 and 80–100 mol % InSb. Approximate room-temperature values of E g for alloys in the range 20–55 mol % InSb have been obtained by diffuse reflectivity measurements on annealed powders.The value of E g is found to fall as either compound is added to the other and the room-temperature values show a minimum of 0.10 eV at approximately 60 mol % InSb.
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