Growth of InAs1−<i>x</i>Sb<i>x</i> (0&amp;lt;<i>x</i>&amp;lt;1) and InSb-InAsSb superlattices by molecular beam epitaxy

Abstract

Thin films of InAs1−xSbx (0&amp;lt;x&amp;lt;1) have been deposited on GaAs and InSb substrates in the temperature range 300–400 °C using molecular beam epitaxy. The solid composition was found to be quite sensitive to the Sb flux and less sensitive to As flux. InSb-InAsSb superlattice structures have also been grown and studied. Both the ternary alloy and the superlattice structures can be potential material systems for detectors covering the 8–12-μ range.