Optical characterization of pseudomorphic In<i>x</i>Ga1−<i>x</i>As–GaAs single-quantum-well heterostructures

Neal G. Anderson, W. D. Laidig, R. M. Kolbas, +1

Journal of Applied Physics

SemiconductorsMaterials ScienceWide-bandgap SemiconductorEngineeringPhysics +13

Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers

R. M. Kolbas, Neal G. Anderson, W. D. Laidig, +4

IEEE Journal of Quantum Electronics

SemiconductorsPhotonicsMaterials ScienceStrained-layer Ingaas-gaas-algaas PhotopumpedEngineering +11

Growth of CdTe films on sapphire by molecular beam epitaxy

T. H. Myers, Y. C. Lo, R. N. Bicknell, +1

Applied Physics Letters

Materials ScienceMaterials EngineeringSemiconductorsOptical MaterialsEngineering +13

Growth of InAs1−<i>x</i>Sb<i>x</i> (0&amp;lt;<i>x</i>&amp;lt;1) and InSb-InAsSb superlattices by molecular beam epitaxy

G. S. Lee, Y. C. Lo, Y. F. Lin, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering +12

Growth of CdTe films on silicon by molecular beam epitaxy

Y. C. Lo, R. N. Bicknell, T. H. Myers, +2

Journal of Applied Physics

SemiconductorsMaterials ScienceIi-vi SemiconductorEpitaxial GrowthEngineering +12

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

S. M. Bedair, T. P. Humphreys, N. A. El-Masry, +6

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringDifferent Superlattice StructuresPit DensitySuperlattice Buffer Layers +14

Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxy

T. H. Myers, Y. C. Lo, J. F. Schetzina, +1

Journal of Applied Physics

Materials ScienceMaterials EngineeringSemiconductorsElectronic DevicesEngineering +12

Laser properties and carrier collection in ultrathin quantum-well heterostructures

R. M. Kolbas, Y. C. Lo, J.-H. Lee

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringLaser ApplicationsHigh-power Lasers +15

Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering

Y. J. Yang, Y. C. Lo, G. S. Lee, +2

Applied Physics Letters

Materials ScienceQuantum SciencePhotonicsAdvanced Laser ProcessingEngineering +13

High-efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic In<i>x</i>Ga1−<i>x</i>As quantum wells

Neal G. Anderson, Y. C. Lo, R. M. Kolbas

Applied Physics Letters

Wide-bandgap SemiconductorCategoryquantum ElectronicsOptical MaterialsEngineeringPseudomorphic Quantum Wells +19