<i>p</i>-<i>n</i> junction formation in InSb and InAs1−<i>x</i>Sb<i>x</i> by metalorganic chemical vapor deposition

Abstract

p-n junctions have been fabricated in InSb and InAs1−xSbx (0.4&amp;lt;x&amp;lt;0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8–11-μm range, thus providing a potential material system for detectors covering the 8–12-μm range.