R. M. Biefeld

The band-gap bowing of AlxGa1−xN alloys

S. R. Lee, A. F. Wright, Mary H. Crawford et al. · Applied Physics Letters · 1999 · 182 citations

Materials Science, Materials Engineering, Aluminium Nitride +14

The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

Jung Han, T.B. Ng, R. M. Biefeld et al. · Applied Physics Letters · 1997 · 167 citations

Wide-bandgap Semiconductor, Chemical Engineering, Electrical Engineering +15

Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

S. R. Kurtz, R. M. Biefeld, L. R. Dawson et al. · Applied Physics Letters · 1994 · 73 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +22

OMVPE growth and gas-phase reactions of AlGaN for UV emitters

Jung Han, Jeffrey J. Figiel, Mary H. Crawford et al. · Journal of Crystal Growth · 1998 · 71 citations

Aluminium Nitride, Engineering, Photochemistry +5

Stability of strained quantum-well field-effect transistor structures

P. S. Peercy, Brian W. Dodson, J. Y. Tsao et al. · IEEE Electron Device Letters · 1988 · 60 citations

Materials Science, Semiconductor Device, Engineering +13