IEEE Electron Device Letters · 1988 · 60 citations · 10 references
Materials ScienceSemiconductor DeviceEngineeringDislocation InteractionPhysicsCrystalline DefectsQuantum DeviceApplied PhysicsQuantum MaterialsThin FilmsStrained-layer StructuresMicroelectronicsDevice FabricationBest PerformanceHigh Strain RateStructural Materials
Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing steps permissible in the integration of these devices to form complex circuits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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