Electroreflectance measurements in mixed III–V alloys

Abstract

Electroreflectance measurements by the electrolyte technique have been made on alloys of the InAs x Sb 1−x , InAs 1−x P x , and Ga x In 1−x Sb systems and the variation of the values of E 1 , E 1 + Δ 1 , E 0 ′, and E 2 found as a function of composition x. These results have been analyzed together with those previously published for the GaAs 1−x P x and Ga x In 1−x As alloys. It is found that in all five cases, the deviation from linearity of the E versus x curves must be attributed mainly to the effects of disorder in the alloy lattice. For each curve, a parameter measuring the effect of disorder has been determined and the results are discussed in terms of the band structure of the alloys.