Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 328 citations

Materials Science, Crack-free Gan, Wide-bandgap Semiconductor +11

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

H. Lahrèche, P. Vennéguès, O. Tottereau et al. · Journal of Crystal Growth · 2000 · 102 citations

Materials Science, Materials Engineering, Aluminium Nitride +6

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

A. Strittmatter, A. Krost, M. Straßburg et al. · Applied Physics Letters · 1999 · 75 citations

Materials Science, Chemical Engineering, Engineering +9

The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD

S. Zamir, B. Meyler, E. Zolotoyabko et al. · Journal of Crystal Growth · 2000 · 64 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +8

Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

Rui Jiang, P. Chen, Dongjuan Xi et al. · Applied Physics Letters · 2000 · 61 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11