Applied Physics Letters · 1999 · 75 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsThermal Properties Of SemiconductorsAtomic Force Microscopy AnalysisBuffer LayersGallium NitrideGallium Nitride (Gan) MaterialsLow-pressure Chemical Vapor DepositionMetal-organic Chemical Vapor DepositionSecondary Ion Mass SpectrometryX-ray Diffraction Analysis
We have investigated the growth of GaN on silicon by low-pressure metal organic chemical vapor deposition. Good quality GaN layers are grown on silicon(111) using an AlAs nucleation layer. AlAs is thermally stable even at 1050 °C and, unlike GaN and AlN buffer layers, the formation of SiNx on the Si surface is prevented. Single crystalline GaN films are obtained by introducing a thin low-temperature GaN buffer layer grown on the AlAs nucleation layer. The GaN layers are characterized by x-ray diffraction, atomic force microscopy, secondary ion mass spectroscopy, photoluminescence, and cathodoluminescence.
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Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
J. Yang, C. J. Sun, Q. Chen et al. · Applied Physics Letters · 1996 · 101 citations