A. Szymakowski

Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)

Y. Dikme, G. Gerstenbrandt, A. Alam et al. · Journal of Crystal Growth · 2002 · 22 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +5

Growth studies of GaN and alloys on LiAlO ₂ by MOVPE

Y. Dikme, Philipp van Gemmern, B. H. T. Chai et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 20 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

G. P. Yablonskii, E. V. Lutsenko, Vitaly Z. Zubialevich et al. · Journal of Crystal Growth · 2004 · 12 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +11

Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers

I. V. Sedova, S. V. Sorokin, V. A. Kaigorodov et al. · Semiconductors · 2004 · 12 citations

Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

M. Fieger, Y. Dikme, Frank Jessen et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 12 citations

Materials Engineering, Semiconductors, Electrical Engineering +14