M. Fieger

Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)

Y. Dikme, G. Gerstenbrandt, A. Alam et al. · Journal of Crystal Growth · 2002 · 22 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +5

Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

H. Behmenburg, L. Rahimzadeh Khoshroo, M. Eickelkamp et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 14 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Optimisation of AlInN/GaN HEMT structures

L. Rahimzadeh Khoshroo, C. Mauder, W. Zhang et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 13 citations

Semiconductors, Layer Thickness, Electrical Engineering +14

MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates

M. Fieger, M. Eickelkamp, L. Rahimzadeh Koshroo et al. · Journal of Crystal Growth · 2006 · 13 citations

Materials Engineering, Aluminium Nitride, Electrical Engineering +10

Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

M. Fieger, Y. Dikme, Frank Jessen et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 12 citations

Materials Engineering, Semiconductors, Electrical Engineering +14