E. V. Lutsenko

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

V. N. Jmerik, A. M. Mizerov, A. А. Ситникова et al. · Applied Physics Letters · 2010 · 57 citations

Laser Structures, Photonics, Optical Materials +15

Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers

V. N. Jmerik, E. V. Lutsenko, S. V. Ivanov · physica status solidi (a) · 2013 · 51 citations · Full text

Materials Science, High Al Content, Waveguide Algan Layers +15

Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al₂O₃

S. V. Ivanov, A. А. Ситникова, M. A. Yagovkina et al. · Semiconductor Science and Technology · 2014 · 43 citations

Aluminium Nitride, Threshold Power Density, Engineering +17

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V. N. Jmerik, T. V. Shubina, A. M. Mizerov et al. · Journal of Crystal Growth · 2008 · 41 citations

Materials Science, Deep-uv Leds, Aluminium Nitride +8

High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval

M. S. Leanenia, E. V. Lutsenko, M. V. Rzheutski et al. · Optical Materials · 2016 · 36 citations

Photonics, Phosphorescence Imaging, Engineering +11