A. M. Mizerov

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

V. N. Jmerik, A. M. Mizerov, A. А. Ситникова et al. · Applied Physics Letters · 2010 · 57 citations

Laser Structures, Photonics, Optical Materials +15

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

V. N. Jmerik, A. M. Mizerov, Pavel Aseev et al. · Journal of Crystal Growth · 2012 · 52 citations

Materials Science, Aluminium Nitride, Surface Characterization +10

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V. N. Jmerik, T. V. Shubina, A. M. Mizerov et al. · Journal of Crystal Growth · 2008 · 41 citations

Materials Science, Deep-uv Leds, Aluminium Nitride +8

Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold

M.R. Ainbund, A. N. Alekseev, O. V. Alymov et al. · Technical Physics Letters · 2012 · 35 citations

Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111)

A. S. Lenshin, A. M. Mizerov, H. Leiste et al. · Applied Surface Science · 2019 · 31 citations

Materials Science, Wide-bandgap Semiconductor, Hybrid Heterostructures +9