A. M. Mizerov - Concepedia

Author

A. M. Mizerov

Also Known As

A M Mizerov, A Mizerov, A. M. Mizerov, A.M. Mizerov, Andrei Mizerov, Andrey M. Mizerov, Andrey Mizerov, Mizerov A. M., А.М. Mizerov, А.М. Мизеров

107

Publications

564

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Saint Petersburg Academic University Russian Academy of Sciences B.I. Stepanov Institute of Physics Voronezh State University

About

A. M. Mizerov is an author at Physico-Technical Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	298
2	Applied Physics	11	11	298
3	Materials Science	8	8	192
4	Electrical Engineering	2	2	42
5	Materials Engineering	1	1	17

A. M. Mizerov

Publications

403

Citations

H-Index

Page 1

	Year	Citations
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire V. N. Jmerik, A. M. Mizerov, A. А. Ситникова, Applied Physics Letters Laser StructuresPhotonicsOptical MaterialsEngineeringPhysics	2010	57
Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring V. N. Jmerik, A. M. Mizerov, Pavel Aseev, Journal of Crystal Growth Materials ScienceAluminium NitrideSurface CharacterizationEngineeringLaser Reflectometry Monitoring	2012	52
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique V. N. Jmerik, T. V. Shubina, A. M. Mizerov, Journal of Crystal Growth Materials ScienceDeep-uv LedsAluminium NitrideSolid-state LightingEngineering	2008	41
Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold M.R. Ainbund, A. N. Alekseev, O. V. Alymov, Technical Physics Letters	2012	35
Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111) A. S. Lenshin, A. M. Mizerov, H. Leiste, Applied Surface Science Materials ScienceWide-bandgap SemiconductorHybrid HeterostructuresMorphological PropertiesEngineering	2019	31
Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues A. M. Mizerov, A. V. Redkov, S. N. Timoshnev Thin Solid Films Polarity IssuesElectrical EngineeringEngineeringThin Gan FilmsApplied Physics	2017	25
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range S. V. Ivanov, V. N. Jmerik, T. V. Shubina, Journal of Crystal Growth PhotonicsSolid-state LightingEngineeringPhotoluminescencePhysics	2006	24
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, Semiconductors	2018	19
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy V. N. Jmerik, A. M. Mizerov, T. V. Shubina, Semiconductors	2008	18
Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures H. Leiste, A. S. Lenshin, A. M. Mizerov Applied Surface Science Materials EngineeringMaterials ScienceElectrical EngineeringHybrid Gan/sic/por-si/siEngineering	2020	17

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