InAs-Al hybrid devices passing the topological gap protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam, +125

Physical review. B./Physical review. B

EngineeringTopological MaterialsTopological Gap ProtocolTopological Quantum StateElectromagnetic Compatibility +14

Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks

Pavel Aseev, Alexandra Fursina, Frenk Boekhout, +14

Nano Letters

Field effect enhancement in buffered quantum nanowire networks

Filip Křížek, Joachim E. Sestoft, Pavel Aseev, +15

Physical Review Materials

Materials ScienceQuantum ScienceElectrical EngineeringField Effect EnhancementEngineering +12

InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage

Naveed ul Hassan Alvi, Paul E. D. Soto Rodriguez, Pavel Aseev, +5

Nano Energy

Hydrogen Energy TechnologyChemical EngineeringEngineeringHydrogen TransitionApplied Physics +8

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Pavel Aseev, V. N. Jmerik, P. N. Brunkov, +2

Journal of Crystal Growth

Materials ScienceMaterials EngineeringAluminium NitrideInitial Growth StageEngineering +10

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

V. N. Jmerik, A. M. Mizerov, Pavel Aseev, +4

Journal of Crystal Growth

Materials ScienceAluminium NitrideSurface CharacterizationEngineeringLaser Reflectometry Monitoring +8

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Pavel Aseev, Paul E. D. Soto Rodriguez, Víctor J. Gómez, +8

Applied Physics Letters

Optical MaterialsEngineeringOptoelectronic DevicesSi TechnologySemiconductors +18

Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth

Pavel Aseev, Guanzhong Wang, Luca Binci, +14

Nano Letters

Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network

N. H. Alvi, Paul E. D. Soto Rodriguez, Praveen Kumar, +6

Applied Physics Letters

Optical MaterialsEngineeringPhoto-electrochemical CellOptoelectronic DevicesChemistry +19

Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

Pavel Aseev, Ž. Gačević, Almudena Torres‐Pardo, +2

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringOptical PerformanceSemiconductor NanostructuresSemiconductors +14