Field effect enhancement in buffered quantum nanowire networks

Abstract

Realizing scalable high-quality nanowire networks by Molecular Beam Epitaxy (MBE) opens new possibilities in quantum devices and high-speed electronics. In this work, the authors report on the synthesis of complex crystalline patterns of InAs nanowires by selective area growth using MBE. It is shown that employing GaAs(Sb) as selective area grown buffer layers gives substantial elastic strain relaxation and a strong enhancement of the field effect mobility. These findings together with the compatibility of the proposed technique with hybrid epitaxy of superconductors make this material platform an ideal large-scale architecture for quantum applications that are based on gateable superconducting nanocircuits.