Al, B, and Ga ion-implantation doping of SiC

Doping of SiC by Implantation of Boron and Aluminum

T. Troffer, M. Schadt, Thomas Frank et al. · physica status solidi (a) · 1997 · 294 citations

Engineering, Materials Engineering, Materials Science +17

Al and B ion-implantations in 6H- and 3C-SiC

Mulpuri V. Rao, Peter R. Griffiths, O. W. Holland et al. · Journal of Applied Physics · 1995 · 117 citations

Engineering, Materials Engineering, Materials Science +17

Concentration profiles of boron implantations in amorphous and polycrystalline silicon

W. K. Hofker, D. P. Oosthoek, N. J. Koeman et al. · Radiation Effects · 1975 · 111 citations

Engineering, Materials Engineering, Materials Science +15

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

M. A. Capano, Sang‐Wan Ryu, M. R. Melloch et al. · Journal of Electronic Materials · 1998 · 108 citations

Engineering, Materials Engineering, Materials Science +16

Surface roughening in ion implanted 4H-silicon carbide

M. A. Capano, Sei‐Hyung Ryu, James A. Cooper et al. · Journal of Electronic Materials · 1999 · 105 citations

Engineering, Materials Engineering, Materials Science +10