Sang‐Wan Ryu

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

M. A. Capano, Sang‐Wan Ryu, M. R. Melloch et al. · Journal of Electronic Materials · 1998 · 106 citations

Materials Science, Materials Engineering, Ion Implantation +9

Enhanced solar hydrogen generation of high density, high aspect ratio, coaxial InGaN/GaN multi-quantum well nanowires

Mohamed Ebaid, Jin Ho Kang, Seung-Hyuk Lim et al. · Nano Energy · 2015 · 101 citations

High Density, Electrical Engineering, Engineering +6

Doping selective lateral electrochemical etching of GaN for chemical lift-off

Joonmo Park, Kwang Min Song, Seong-Ran Jeon et al. · Applied Physics Letters · 2009 · 100 citations

Wide-bandgap Semiconductor, Electrical Engineering, Chemical Engineering +13

A conductivity-based selective etching for next generation GaN devices

Yu Zhang, Sang‐Wan Ryu, Chris Yerino et al. · physica status solidi (b) · 2010 · 97 citations

Electrical Engineering, Optical Materials, Electrochemical Etching +12

One-Pot in Situ Hydrothermal Growth of BiVO4/Ag/rGO Hybrid Architectures for Solar Water Splitting and Environmental Remediation

Santosh S. Patil, Mukund G. Mali, Mostafa Afifi Hassan et al. · Scientific Reports · 2017 · 97 citations · Full text