Statistics
Publications
9
Citations
353
H-Index
9
Active since
1995
P. H. is an author at National Institute of Standards and Technology specializing in materials science, materials engineering, and engineering.
Publications per year
1995–2000
9
9
Al and B ion-implantations in 6H- and 3C-SiC
Mulpuri V. Rao, Peter R. Griffiths, O. W. Holland et al. · Journal of Applied Physics · 1995 · 117 citations
Doping of gallium nitride using disilane
A. E. Wickenden, L.B. Rowland, K. Doverspike et al. · Journal of Electronic Materials · 1995 · 49 citations
Effectiveness of AlN encapsulant in annealing ion-implanted SiC
Evan M. Handy, Mulpuri V. Rao, Keith Jones et al. · Journal of Applied Physics · 1999 · 45 citations
Al, B, and Ga ion-implantation doping of SiC
Evan M. Handy, Mulpuri V. Rao, O. W. Holland et al. · Journal of Electronic Materials · 2000 · 39 citations
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