Electronics Letters · 1997 · 43 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageDifferential ResistanceGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-voltage BreakdownTransconductance
Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25 µm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39 V was also obtained.
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AlGaN/GaN HEMTs grown on SiC substrates
S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 161 citations
S. Noor Mohammad, Z. Fan, A. Salvador et al. · Applied Physics Letters · 1996 · 60 citations